| Design Considerations for GaN-Based Blue Laser Diodes With InGaN Upper Waveguide Layer | |
| Feng MX(冯美鑫) | |
| 2013-07 | |
| Source Publication | IEEE Journal of Selected Topics in Quantum Electronics
 |
| Volume | 19Issue:4Pages:1500705 |
| Subject Area | 半导体器件 |
| Date Available | 2014-06-03 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/25082 |
| Collection | 集成光电子学国家重点实验室 |
| Recommended Citation GB/T 7714 | Feng MX. Design Considerations for GaN-Based Blue Laser Diodes With InGaN Upper Waveguide Layer[J]. IEEE Journal of Selected Topics in Quantum Electronics,2013,19(4):1500705. |
| APA | Feng MX.(2013).Design Considerations for GaN-Based Blue Laser Diodes With InGaN Upper Waveguide Layer.IEEE Journal of Selected Topics in Quantum Electronics,19(4),1500705. |
| MLA | Feng MX."Design Considerations for GaN-Based Blue Laser Diodes With InGaN Upper Waveguide Layer".IEEE Journal of Selected Topics in Quantum Electronics 19.4(2013):1500705. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| IEEE JSTQE--Design C（578KB） | 限制开放 | License | Application Full Text | |||
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