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Design Considerations for GaN-Based Blue Laser Diodes With InGaN Upper Waveguide Layer
Feng MX(冯美鑫)
2013-07
Source PublicationIEEE Journal of Selected Topics in Quantum Electronics
Volume19Issue:4Pages:1500705
Subject Area半导体器件
Date Available2014-06-03
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/25082
Collection集成光电子学国家重点实验室
Recommended Citation
GB/T 7714
Feng MX. Design Considerations for GaN-Based Blue Laser Diodes With InGaN Upper Waveguide Layer[J]. IEEE Journal of Selected Topics in Quantum Electronics,2013,19(4):1500705.
APA Feng MX.(2013).Design Considerations for GaN-Based Blue Laser Diodes With InGaN Upper Waveguide Layer.IEEE Journal of Selected Topics in Quantum Electronics,19(4),1500705.
MLA Feng MX."Design Considerations for GaN-Based Blue Laser Diodes With InGaN Upper Waveguide Layer".IEEE Journal of Selected Topics in Quantum Electronics 19.4(2013):1500705.
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IEEE JSTQE--Design C(578KB) 限制开放LicenseApplication Full Text
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