SEMI OpenIR  > 中科院半导体材料科学重点实验室
Investigation of the current collapse induced in InGaN back barrier AlGaN/GaN high electron mobility transistors
Xiaojia, Wan; Xiaoliang, Wang; Hongling, Xiao; Chun, Feng; Lijuan, Jiang; Shenqi, Qu; Zhanguo, Wang; Xun, Hou
2013
Source PublicationJournal of Semiconductors
Volume34Issue:10Pages:104002
Subject Area半导体材料
Indexed ByEI
Language英语
Date Available2014-05-16
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/25001
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Xiaojia, Wan,Xiaoliang, Wang,Hongling, Xiao,et al. Investigation of the current collapse induced in InGaN back barrier AlGaN/GaN high electron mobility transistors[J]. Journal of Semiconductors,2013,34(10):104002.
APA Xiaojia, Wan.,Xiaoliang, Wang.,Hongling, Xiao.,Chun, Feng.,Lijuan, Jiang.,...&Xun, Hou.(2013).Investigation of the current collapse induced in InGaN back barrier AlGaN/GaN high electron mobility transistors.Journal of Semiconductors,34(10),104002.
MLA Xiaojia, Wan,et al."Investigation of the current collapse induced in InGaN back barrier AlGaN/GaN high electron mobility transistors".Journal of Semiconductors 34.10(2013):104002.
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