SEMI OpenIR  > 中科院半导体材料科学重点实验室
Persistent photoconductivity in neutron irradiated GaN
Zhang, Minglan; Yang, Ruixia; Liu, Naixin; Wang, Xiaoliang
2013
Source PublicationJournal of Semiconductors
Volume34Issue:9Pages:093005
Subject Area半导体材料
Indexed ByEI
Language英语
Date Available2014-05-16
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24990
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Zhang, Minglan,Yang, Ruixia,Liu, Naixin,et al. Persistent photoconductivity in neutron irradiated GaN[J]. Journal of Semiconductors,2013,34(9):093005.
APA Zhang, Minglan,Yang, Ruixia,Liu, Naixin,&Wang, Xiaoliang.(2013).Persistent photoconductivity in neutron irradiated GaN.Journal of Semiconductors,34(9),093005.
MLA Zhang, Minglan,et al."Persistent photoconductivity in neutron irradiated GaN".Journal of Semiconductors 34.9(2013):093005.
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