Persistent photoconductivity in neutron irradiated GaN | |
Zhang, Minglan; Yang, Ruixia; Liu, Naixin; Wang, Xiaoliang | |
2013 | |
Source Publication | Journal of Semiconductors
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Volume | 34Issue:9Pages:093005 |
Subject Area | 半导体材料 |
Indexed By | EI |
Language | 英语 |
Date Available | 2014-05-16 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/24990 |
Collection | 中科院半导体材料科学重点实验室 |
Recommended Citation GB/T 7714 | Zhang, Minglan,Yang, Ruixia,Liu, Naixin,et al. Persistent photoconductivity in neutron irradiated GaN[J]. Journal of Semiconductors,2013,34(9):093005. |
APA | Zhang, Minglan,Yang, Ruixia,Liu, Naixin,&Wang, Xiaoliang.(2013).Persistent photoconductivity in neutron irradiated GaN.Journal of Semiconductors,34(9),093005. |
MLA | Zhang, Minglan,et al."Persistent photoconductivity in neutron irradiated GaN".Journal of Semiconductors 34.9(2013):093005. |
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