| Persistent photoconductivity in neutron irradiated GaN | |
| Zhang, Minglan; Yang, Ruixia; Liu, Naixin; Wang, Xiaoliang | |
| 2013 | |
| Source Publication | Journal of Semiconductors
 |
| Volume | 34Issue:9Pages:093005 |
| Subject Area | 半导体材料 |
| Indexed By | EI |
| Language | 英语 |
| Date Available | 2014-05-16 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/24990 |
| Collection | 中科院半导体材料科学重点实验室 |
| Recommended Citation GB/T 7714 | Zhang, Minglan,Yang, Ruixia,Liu, Naixin,et al. Persistent photoconductivity in neutron irradiated GaN[J]. Journal of Semiconductors,2013,34(9):093005. |
| APA | Zhang, Minglan,Yang, Ruixia,Liu, Naixin,&Wang, Xiaoliang.(2013).Persistent photoconductivity in neutron irradiated GaN.Journal of Semiconductors,34(9),093005. |
| MLA | Zhang, Minglan,et al."Persistent photoconductivity in neutron irradiated GaN".Journal of Semiconductors 34.9(2013):093005. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| Persistent photocond（321KB） | 限制开放 | License | Application Full Text | |||
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