SEMI OpenIR  > 半导体超晶格国家重点实验室
UV light controllable depletion zone of metal sulfide/ polyaniline p-n junction and its application in a photoresponsive sensor
YANG Sheng-xue; GONG Jian; LI Jing-bo; XIA Jian-bai
2013
Source PublicationChinese Journal of Luminescence
Volume34Issue:11Pages:1413-1418
Subject Area半导体物理
Indexed ByEI
Language英语
Date Available2014-05-16
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24987
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
YANG Sheng-xue,GONG Jian,LI Jing-bo,et al. UV light controllable depletion zone of metal sulfide/ polyaniline p-n junction and its application in a photoresponsive sensor[J]. Chinese Journal of Luminescence,2013,34(11):1413-1418.
APA YANG Sheng-xue,GONG Jian,LI Jing-bo,&XIA Jian-bai.(2013).UV light controllable depletion zone of metal sulfide/ polyaniline p-n junction and its application in a photoresponsive sensor.Chinese Journal of Luminescence,34(11),1413-1418.
MLA YANG Sheng-xue,et al."UV light controllable depletion zone of metal sulfide/ polyaniline p-n junction and its application in a photoresponsive sensor".Chinese Journal of Luminescence 34.11(2013):1413-1418.
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