Knowledge Management System Of Institute of Semiconductors,CAS
UV light controllable depletion zone of metal sulfide/ polyaniline p-n junction and its application in a photoresponsive sensor | |
YANG Sheng-xue; GONG Jian; LI Jing-bo; XIA Jian-bai | |
2013 | |
Source Publication | Chinese Journal of Luminescence
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Volume | 34Issue:11Pages:1413-1418 |
Subject Area | 半导体物理 |
Indexed By | EI |
Language | 英语 |
Date Available | 2014-05-16 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/24987 |
Collection | 半导体超晶格国家重点实验室 |
Recommended Citation GB/T 7714 | YANG Sheng-xue,GONG Jian,LI Jing-bo,et al. UV light controllable depletion zone of metal sulfide/ polyaniline p-n junction and its application in a photoresponsive sensor[J]. Chinese Journal of Luminescence,2013,34(11):1413-1418. |
APA | YANG Sheng-xue,GONG Jian,LI Jing-bo,&XIA Jian-bai.(2013).UV light controllable depletion zone of metal sulfide/ polyaniline p-n junction and its application in a photoresponsive sensor.Chinese Journal of Luminescence,34(11),1413-1418. |
MLA | YANG Sheng-xue,et al."UV light controllable depletion zone of metal sulfide/ polyaniline p-n junction and its application in a photoresponsive sensor".Chinese Journal of Luminescence 34.11(2013):1413-1418. |
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File Name/Size | DocType | Version | Access | License | ||
UV light controllabl(2303KB) | 限制开放 | License | Application Full Text |
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