UV light controllable depletion zone of metal sulfide/ polyaniline p-n junction and its application in a photoresponsive sensor

	UV light controllable depletion zone of metal sulfide/ polyaniline p-n junction and its application in a photoresponsive sensor
	YANG Sheng-xue; GONG Jian; LI Jing-bo; XIA Jian-bai
	2013
Source Publication	Chinese Journal of Luminescence
Volume	34 Issue:11 Pages:1413-1418
Subject Area	半导体物理
Indexed By	EI
Language	英语
Date Available	2014-05-16
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/24987
Collection	半导体超晶格国家重点实验室
Recommended Citation GB/T 7714	YANG Sheng-xue,GONG Jian,LI Jing-bo,et al. UV light controllable depletion zone of metal sulfide/ polyaniline p-n junction and its application in a photoresponsive sensor[J]. Chinese Journal of Luminescence,2013,34(11):1413-1418.
APA	YANG Sheng-xue,GONG Jian,LI Jing-bo,&XIA Jian-bai.(2013).UV light controllable depletion zone of metal sulfide/ polyaniline p-n junction and its application in a photoresponsive sensor.Chinese Journal of Luminescence,34(11),1413-1418.
MLA	YANG Sheng-xue,et al."UV light controllable depletion zone of metal sulfide/ polyaniline p-n junction and its application in a photoresponsive sensor".Chinese Journal of Luminescence 34.11(2013):1413-1418.

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