SEMI OpenIR  > 中科院半导体材料科学重点实验室
Defect revelation and evaluation of 4H silicon carbide by optimized molten KOH etching method
Lin Dong; Liu Zheng; Xingfang Liu
2013
Source PublicationMaterials Science Forum
Pages740-742
Subject Area半导体材料
Indexed ByEI
Language英语
Date Available2014-05-16
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24978
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Lin Dong,Liu Zheng,Xingfang Liu. Defect revelation and evaluation of 4H silicon carbide by optimized molten KOH etching method[J]. Materials Science Forum,2013:740-742.
APA Lin Dong,Liu Zheng,&Xingfang Liu.(2013).Defect revelation and evaluation of 4H silicon carbide by optimized molten KOH etching method.Materials Science Forum,740-742.
MLA Lin Dong,et al."Defect revelation and evaluation of 4H silicon carbide by optimized molten KOH etching method".Materials Science Forum (2013):740-742.
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