SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
MOCVD生长的GaN:Mg外延膜的光电性质
王莉莉,张书明,杨辉,梁骏吾
2008
Source Publication半导体学报
Volume29Issue:1Pages:29-32
Date Available2014-05-16
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24971
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
王莉莉,张书明,杨辉,梁骏吾. MOCVD生长的GaN:Mg外延膜的光电性质[J]. 半导体学报,2008,29(1):29-32.
APA 王莉莉,张书明,杨辉,梁骏吾.(2008).MOCVD生长的GaN:Mg外延膜的光电性质.半导体学报,29(1),29-32.
MLA 王莉莉,张书明,杨辉,梁骏吾."MOCVD生长的GaN:Mg外延膜的光电性质".半导体学报 29.1(2008):29-32.
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