Physical properties and growth of SiC

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Physical properties and growth of SiC
	Liang Junwu,Zhu Jianjun
	1998
Source Publication	Chinese Journal of Electronics
Volume	7 Issue:1 Pages:28-33
Subject Area	光电子学
Date Available	2014-05-15
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/24962
Collection	中国科学院半导体研究所（2009年前）
Recommended Citation GB/T 7714	Liang Junwu,Zhu Jianjun. Physical properties and growth of SiC[J]. Chinese Journal of Electronics,1998,7(1):28-33.
APA	Liang Junwu,Zhu Jianjun.(1998).Physical properties and growth of SiC.Chinese Journal of Electronics,7(1),28-33.
MLA	Liang Junwu,Zhu Jianjun."Physical properties and growth of SiC".Chinese Journal of Electronics 7.1(1998):28-33.

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