Knowledge Management System Of Institute of Semiconductors,CAS
Physical properties and growth of SiC | |
Liang Junwu,Zhu Jianjun | |
1998 | |
Source Publication | Chinese Journal of Electronics
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Volume | 7Issue:1Pages:28-33 |
Subject Area | 光电子学 |
Date Available | 2014-05-15 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/24962 |
Collection | 中国科学院半导体研究所(2009年前) |
Recommended Citation GB/T 7714 | Liang Junwu,Zhu Jianjun. Physical properties and growth of SiC[J]. Chinese Journal of Electronics,1998,7(1):28-33. |
APA | Liang Junwu,Zhu Jianjun.(1998).Physical properties and growth of SiC.Chinese Journal of Electronics,7(1),28-33. |
MLA | Liang Junwu,Zhu Jianjun."Physical properties and growth of SiC".Chinese Journal of Electronics 7.1(1998):28-33. |
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