SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Physical properties and growth of SiC
Liang Junwu,Zhu Jianjun
1998
Source PublicationChinese Journal of Electronics
Volume7Issue:1Pages:28-33
Subject Area光电子学
Date Available2014-05-15
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24962
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Liang Junwu,Zhu Jianjun. Physical properties and growth of SiC[J]. Chinese Journal of Electronics,1998,7(1):28-33.
APA Liang Junwu,Zhu Jianjun.(1998).Physical properties and growth of SiC.Chinese Journal of Electronics,7(1),28-33.
MLA Liang Junwu,Zhu Jianjun."Physical properties and growth of SiC".Chinese Journal of Electronics 7.1(1998):28-33.
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