SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
The dependence of GexSi1-x epitaxial growth on GeH4 flow using chemical vopour deposition
Jin Xiaojun, Liang Junwu
1997
Source PublicationJ.Materials Science :Materials in Electronics
Volume8Pages:405-408
Subject Area光电子学
Date Available2014-05-15
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24960
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Jin Xiaojun, Liang Junwu. The dependence of GexSi1-x epitaxial growth on GeH4 flow using chemical vopour deposition[J]. J.Materials Science :Materials in Electronics,1997,8:405-408.
APA Jin Xiaojun, Liang Junwu.(1997).The dependence of GexSi1-x epitaxial growth on GeH4 flow using chemical vopour deposition.J.Materials Science :Materials in Electronics,8,405-408.
MLA Jin Xiaojun, Liang Junwu."The dependence of GexSi1-x epitaxial growth on GeH4 flow using chemical vopour deposition".J.Materials Science :Materials in Electronics 8(1997):405-408.
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