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Dicssociated screw dislocation which can relieve strain energy in the epitaxial layer of GeSi on Si(001)
Xue-yuan Wan,Jun-Wu Liang ,Min-Liang Liu,Xiao-Jun Jin
1997
Source PublicationPhys.Rev. B
Volume55Issue:15Pages:9259-9262
Subject Area光电子学
Date Available2014-05-15
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24959
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Xue-yuan Wan,Jun-Wu Liang ,Min-Liang Liu,Xiao-Jun Jin. Dicssociated screw dislocation which can relieve strain energy in the epitaxial layer of GeSi on Si(001)[J]. Phys.Rev. B,1997,55(15):9259-9262.
APA Xue-yuan Wan,Jun-Wu Liang ,Min-Liang Liu,Xiao-Jun Jin.(1997).Dicssociated screw dislocation which can relieve strain energy in the epitaxial layer of GeSi on Si(001).Phys.Rev. B,55(15),9259-9262.
MLA Xue-yuan Wan,Jun-Wu Liang ,Min-Liang Liu,Xiao-Jun Jin."Dicssociated screw dislocation which can relieve strain energy in the epitaxial layer of GeSi on Si(001)".Phys.Rev. B 55.15(1997):9259-9262.
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