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GeSi_CVD系统的流体力学和表面反应动力学模型
金晓军; 梁骏吾
1996
Source Publication电子学报
Volume24Issue:5Pages:7-12
Subject Area光电子学
Date Available2014-05-15
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24958
Collection中国科学院半导体研究所（2009年前）
Recommended Citation
GB/T 7714		 金晓军,梁骏吾. GeSi_CVD系统的流体力学和表面反应动力学模型[J]. 电子学报,1996,24(5):7-12.
APA 金晓军,&梁骏吾.(1996).GeSi_CVD系统的流体力学和表面反应动力学模型.电子学报,24(5),7-12.
MLA 金晓军,et al."GeSi_CVD系统的流体力学和表面反应动力学模型".电子学报 24.5(1996):7-12.
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