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Photoluminescence spectrum study of the GaAs/Si epilayer grown by using a thin amorphous Si film as buffer layer
Mao –Sheng Hao, Jun-Wu Liang, Lian-Xi Zheng, Li-Seng Deng, Zi-Bao Xiao, Xiong-Wei Hu
1995
Source PublicationJpn.J.Appl.Phys
Volume34Pages:L900-L902
Subject Area光电子学
Date Available2014-05-14
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24956
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Mao –Sheng Hao, Jun-Wu Liang, Lian-Xi Zheng, Li-Seng Deng, Zi-Bao Xiao, Xiong-Wei Hu. Photoluminescence spectrum study of the GaAs/Si epilayer grown by using a thin amorphous Si film as buffer layer[J]. Jpn.J.Appl.Phys,1995,34:L900-L902.
APA Mao –Sheng Hao, Jun-Wu Liang, Lian-Xi Zheng, Li-Seng Deng, Zi-Bao Xiao, Xiong-Wei Hu.(1995).Photoluminescence spectrum study of the GaAs/Si epilayer grown by using a thin amorphous Si film as buffer layer.Jpn.J.Appl.Phys,34,L900-L902.
MLA Mao –Sheng Hao, Jun-Wu Liang, Lian-Xi Zheng, Li-Seng Deng, Zi-Bao Xiao, Xiong-Wei Hu."Photoluminescence spectrum study of the GaAs/Si epilayer grown by using a thin amorphous Si film as buffer layer".Jpn.J.Appl.Phys 34(1995):L900-L902.
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