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SEMI OpenIR  > 中国科学院半导体研究所（2009年前）
GaAs/Si 外延层X射线摇摆曲线的动力学模拟和位错密度的测量
郝茂盛; 王玉田; 梁骏吾
1995
Source Publication中国科学（A辑）
Volume25Issue:11Pages:1175-1180
Subject Area光电子学
Date Available2014-05-14
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24954
Collection中国科学院半导体研究所（2009年前）
Recommended Citation
GB/T 7714		 郝茂盛,王玉田,梁骏吾. GaAs/Si 外延层X射线摇摆曲线的动力学模拟和位错密度的测量[J]. 中国科学（A辑）,1995,25(11):1175-1180.
APA 郝茂盛,王玉田,&梁骏吾.(1995).GaAs/Si 外延层X射线摇摆曲线的动力学模拟和位错密度的测量.中国科学（A辑）,25(11),1175-1180.
MLA 郝茂盛,et al."GaAs/Si 外延层X射线摇摆曲线的动力学模拟和位错密度的测量".中国科学（A辑） 25.11(1995):1175-1180.
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