Knowledge Management System Of Institute of Semiconductors,CAS
GaAs/Si 外延层X射线摇摆曲线的动力学模拟和位错密度的测量 | |
郝茂盛; 王玉田; 梁骏吾 | |
1995 | |
Source Publication | 中国科学(A辑)
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Volume | 25Issue:11Pages:1175-1180 |
Subject Area | 光电子学 |
Date Available | 2014-05-14 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/24954 |
Collection | 中国科学院半导体研究所(2009年前) |
Recommended Citation GB/T 7714 | 郝茂盛,王玉田,梁骏吾. GaAs/Si 外延层X射线摇摆曲线的动力学模拟和位错密度的测量[J]. 中国科学(A辑),1995,25(11):1175-1180. |
APA | 郝茂盛,王玉田,&梁骏吾.(1995).GaAs/Si 外延层X射线摇摆曲线的动力学模拟和位错密度的测量.中国科学(A辑),25(11),1175-1180. |
MLA | 郝茂盛,et al."GaAs/Si 外延层X射线摇摆曲线的动力学模拟和位错密度的测量".中国科学(A辑) 25.11(1995):1175-1180. |
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File Name/Size | DocType | Version | Access | License | ||
GaAs_Si外延层X射线双晶衍_省略_(341KB) | 限制开放 | License | Application Full Text |
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