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低压MOCVD 生长的InGaAs/InP量子阱的光致发光谱线线宽及量子尺寸效应的测量分析
陈德勇,朱龙德,李晶,熊飞克,徐俊英,万寿科,梁骏吾
1993
Source Publication半导体学报
Volume14Issue:6Pages:345-352
Subject Area光电子学
Date Available2014-05-14
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24953
Collection中国科学院半导体研究所（2009年前）
Recommended Citation
GB/T 7714		 陈德勇,朱龙德,李晶,熊飞克,徐俊英,万寿科,梁骏吾. 低压MOCVD 生长的InGaAs/InP量子阱的光致发光谱线线宽及量子尺寸效应的测量分析[J]. 半导体学报,1993,14(6):345-352.
APA 陈德勇,朱龙德,李晶,熊飞克,徐俊英,万寿科,梁骏吾.(1993).低压MOCVD 生长的InGaAs/InP量子阱的光致发光谱线线宽及量子尺寸效应的测量分析.半导体学报,14(6),345-352.
MLA 陈德勇,朱龙德,李晶,熊飞克,徐俊英,万寿科,梁骏吾."低压MOCVD 生长的InGaAs/InP量子阱的光致发光谱线线宽及量子尺寸效应的测量分析".半导体学报 14.6(1993):345-352.
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