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低压MOCVD 生长的InGaAs/InP量子阱的光致发光谱线线宽及量子尺寸效应的测量分析 | |
陈德勇,朱龙德,李晶,熊飞克,徐俊英,万寿科,梁骏吾 | |
1993 | |
Source Publication | 半导体学报
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Volume | 14Issue:6Pages:345-352 |
Subject Area | 光电子学 |
Date Available | 2014-05-14 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/24953 |
Collection | 中国科学院半导体研究所(2009年前) |
Recommended Citation GB/T 7714 | 陈德勇,朱龙德,李晶,熊飞克,徐俊英,万寿科,梁骏吾. 低压MOCVD 生长的InGaAs/InP量子阱的光致发光谱线线宽及量子尺寸效应的测量分析[J]. 半导体学报,1993,14(6):345-352. |
APA | 陈德勇,朱龙德,李晶,熊飞克,徐俊英,万寿科,梁骏吾.(1993).低压MOCVD 生长的InGaAs/InP量子阱的光致发光谱线线宽及量子尺寸效应的测量分析.半导体学报,14(6),345-352. |
MLA | 陈德勇,朱龙德,李晶,熊飞克,徐俊英,万寿科,梁骏吾."低压MOCVD 生长的InGaAs/InP量子阱的光致发光谱线线宽及量子尺寸效应的测量分析".半导体学报 14.6(1993):345-352. |
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低压MOCVD生长的InGaAs-InP(186KB) | 限制开放 | License | Application Full Text |
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