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Investigation of N-doped FZ Si crystals
Liang Junwu; Deng Lishen; Luan Hongfa; Zeng Hongjun
1986
Source PublicationThe Proc. of the International Conference on Semiconductor and IC Technology. World Scientific.
Pages771-773
Subject Area光电子学
Date Available2014-05-14
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24952
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Liang Junwu,Deng Lishen,Luan Hongfa,et al. Investigation of N-doped FZ Si crystals[J]. The Proc. of the International Conference on Semiconductor and IC Technology. World Scientific.,1986:771-773.
APA Liang Junwu,Deng Lishen,Luan Hongfa,&Zeng Hongjun.(1986).Investigation of N-doped FZ Si crystals.The Proc. of the International Conference on Semiconductor and IC Technology. World Scientific.,771-773.
MLA Liang Junwu,et al."Investigation of N-doped FZ Si crystals".The Proc. of the International Conference on Semiconductor and IC Technology. World Scientific. (1986):771-773.
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