SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
两性杂质锗在LPE CaAs中分凝系数和占位比的计算
杨辉; 梁骏吾
1989
Source Publication半导体学报
Volume10Issue:10Pages:725-732
Subject Area光电子学
Language中文
Date Available2014-05-14
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24946
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
杨辉,梁骏吾. 两性杂质锗在LPE CaAs中分凝系数和占位比的计算[J]. 半导体学报,1989,10(10):725-732.
APA 杨辉,&梁骏吾.(1989).两性杂质锗在LPE CaAs中分凝系数和占位比的计算.半导体学报,10(10),725-732.
MLA 杨辉,et al."两性杂质锗在LPE CaAs中分凝系数和占位比的计算".半导体学报 10.10(1989):725-732.
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