SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Ge在GaAs液相外延中的行为
杨辉; 梁骏吾
1988
Source Publication半导体学报
Volume9Issue:4Pages:429-434
Subject Area光电子学
Language中文
Date Available2014-05-14
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24944
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
杨辉,梁骏吾. Ge在GaAs液相外延中的行为[J]. 半导体学报,1988,9(4):429-434.
APA 杨辉,&梁骏吾.(1988).Ge在GaAs液相外延中的行为.半导体学报,9(4),429-434.
MLA 杨辉,et al."Ge在GaAs液相外延中的行为".半导体学报 9.4(1988):429-434.
Files in This Item:
File Name/Size DocType Version Access License
Ge在GaAs液相外延中的行为.pdf(1646KB) 限制开放LicenseApplication Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[杨辉]'s Articles
[梁骏吾]'s Articles
Baidu academic
Similar articles in Baidu academic
[杨辉]'s Articles
[梁骏吾]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[杨辉]'s Articles
[梁骏吾]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.