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SEMI OpenIR  > 中国科学院半导体研究所（2009年前）
Si-C 相图的研究及碳对硅单晶质量的影响.
梁骏吾; 邓礼生; 郑红军
1986
Source Publication稀有金属
Volume11Issue:5Pages:336-342
Subject Area光电子学
Language中文
Date Available2014-05-14
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24942
Collection中国科学院半导体研究所（2009年前）
Recommended Citation
GB/T 7714		 梁骏吾,邓礼生,郑红军. Si-C 相图的研究及碳对硅单晶质量的影响.[J]. 稀有金属,1986,11(5):336-342.
APA 梁骏吾,邓礼生,&郑红军.(1986).Si-C 相图的研究及碳对硅单晶质量的影响..稀有金属,11(5),336-342.
MLA 梁骏吾,et al."Si-C 相图的研究及碳对硅单晶质量的影响.".稀有金属 11.5(1986):336-342.
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