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Enhancing structural transition by carrier and quantum confinement: Stabilization of cubic InN quantum dots by Mn incorporation
Meng, Xiuqing; Chen, Zhanghui; Chen, Zhuo; Wu, Fengmin; Li, Shu-Shen; Li, Jingbo; Wu, Junqiao; Wei, Su-Huai
2013
Source PublicationApplied Physics Letters
Volume103Issue:25Pages:253102
Subject Area半导体物理
Indexed ByEI
Language英语
Date Available2014-05-08
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24927
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Meng, Xiuqing,Chen, Zhanghui,Chen, Zhuo,et al. Enhancing structural transition by carrier and quantum confinement: Stabilization of cubic InN quantum dots by Mn incorporation[J]. Applied Physics Letters,2013,103(25):253102.
APA Meng, Xiuqing.,Chen, Zhanghui.,Chen, Zhuo.,Wu, Fengmin.,Li, Shu-Shen.,...&Wei, Su-Huai.(2013).Enhancing structural transition by carrier and quantum confinement: Stabilization of cubic InN quantum dots by Mn incorporation.Applied Physics Letters,103(25),253102.
MLA Meng, Xiuqing,et al."Enhancing structural transition by carrier and quantum confinement: Stabilization of cubic InN quantum dots by Mn incorporation".Applied Physics Letters 103.25(2013):253102.
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