Knowledge Management System Of Institute of Semiconductors,CAS
Enhancing structural transition by carrier and quantum confinement: Stabilization of cubic InN quantum dots by Mn incorporation | |
Meng, Xiuqing; Chen, Zhanghui; Chen, Zhuo; Wu, Fengmin; Li, Shu-Shen; Li, Jingbo; Wu, Junqiao; Wei, Su-Huai | |
2013 | |
Source Publication | Applied Physics Letters
![]() |
Volume | 103Issue:25Pages:253102 |
Subject Area | 半导体物理 |
Indexed By | EI |
Language | 英语 |
Date Available | 2014-05-08 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/24927 |
Collection | 半导体超晶格国家重点实验室 |
Recommended Citation GB/T 7714 | Meng, Xiuqing,Chen, Zhanghui,Chen, Zhuo,et al. Enhancing structural transition by carrier and quantum confinement: Stabilization of cubic InN quantum dots by Mn incorporation[J]. Applied Physics Letters,2013,103(25):253102. |
APA | Meng, Xiuqing.,Chen, Zhanghui.,Chen, Zhuo.,Wu, Fengmin.,Li, Shu-Shen.,...&Wei, Su-Huai.(2013).Enhancing structural transition by carrier and quantum confinement: Stabilization of cubic InN quantum dots by Mn incorporation.Applied Physics Letters,103(25),253102. |
MLA | Meng, Xiuqing,et al."Enhancing structural transition by carrier and quantum confinement: Stabilization of cubic InN quantum dots by Mn incorporation".Applied Physics Letters 103.25(2013):253102. |
Files in This Item: | ||||||
File Name/Size | DocType | Version | Access | License | ||
Enhancing structural(1377KB) | 限制开放 | License | Application Full Text |
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Edit Comment