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Ga-vacancy-induced room-temperature ferromagnetic and adjusted-band-gap behaviors in GaN nanoparticles | |
Huihui Ren, Jikang Jian, Chu Chen, Dong Pan, Abdulezi Ablat, Yanfei Sun, Jin Li, Rong Wu | |
2013 | |
Source Publication | Applied Physics A
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Pages | 1-7 |
Subject Area | 半导体物理 |
Indexed By | EI |
Language | 英语 |
Date Available | 2014-05-08 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/24924 |
Collection | 半导体超晶格国家重点实验室 |
Recommended Citation GB/T 7714 | Huihui Ren, Jikang Jian, Chu Chen, Dong Pan, Abdulezi Ablat, Yanfei Sun, Jin Li, Rong Wu. Ga-vacancy-induced room-temperature ferromagnetic and adjusted-band-gap behaviors in GaN nanoparticles[J]. Applied Physics A,2013:1-7. |
APA | Huihui Ren, Jikang Jian, Chu Chen, Dong Pan, Abdulezi Ablat, Yanfei Sun, Jin Li, Rong Wu.(2013).Ga-vacancy-induced room-temperature ferromagnetic and adjusted-band-gap behaviors in GaN nanoparticles.Applied Physics A,1-7. |
MLA | Huihui Ren, Jikang Jian, Chu Chen, Dong Pan, Abdulezi Ablat, Yanfei Sun, Jin Li, Rong Wu."Ga-vacancy-induced room-temperature ferromagnetic and adjusted-band-gap behaviors in GaN nanoparticles".Applied Physics A (2013):1-7. |
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Ga-vacancy-induced r(794KB) | 限制开放 | License | Application Full Text |
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