Ga-vacancy-induced room-temperature ferromagnetic and adjusted-band-gap behaviors in GaN nanoparticles

	Ga-vacancy-induced room-temperature ferromagnetic and adjusted-band-gap behaviors in GaN nanoparticles
	Huihui Ren, Jikang Jian, Chu Chen, Dong Pan, Abdulezi Ablat, Yanfei Sun, Jin Li, Rong Wu
	2013
Source Publication	Applied Physics A
Pages	1-7
Subject Area	半导体物理
Indexed By	EI
Language	英语
Date Available	2014-05-08
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/24924
Collection	半导体超晶格国家重点实验室
Recommended Citation GB/T 7714	Huihui Ren, Jikang Jian, Chu Chen, Dong Pan, Abdulezi Ablat, Yanfei Sun, Jin Li, Rong Wu. Ga-vacancy-induced room-temperature ferromagnetic and adjusted-band-gap behaviors in GaN nanoparticles[J]. Applied Physics A,2013:1-7.
APA	Huihui Ren, Jikang Jian, Chu Chen, Dong Pan, Abdulezi Ablat, Yanfei Sun, Jin Li, Rong Wu.(2013).Ga-vacancy-induced room-temperature ferromagnetic and adjusted-band-gap behaviors in GaN nanoparticles.Applied Physics A,1-7.
MLA	Huihui Ren, Jikang Jian, Chu Chen, Dong Pan, Abdulezi Ablat, Yanfei Sun, Jin Li, Rong Wu."Ga-vacancy-induced room-temperature ferromagnetic and adjusted-band-gap behaviors in GaN nanoparticles".Applied Physics A (2013):1-7.

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