Knowledge Management System Of Institute of Semiconductors,CAS
An ultra-low-power area-efficient non-volatile memory in a 0.18 μm single-poly CMOS process for passive RFID tags | |
Jia Xiaoyun,Feng Peng,Zhang Shengguang,Wu Nanjian,Zhao Baiqin and Liu Su | |
2013 | |
Source Publication | Journal of Semiconductors
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Volume | 34Issue:8Pages:085004 |
Subject Area | 半导体物理 |
Indexed By | EI |
Language | 英语 |
Date Available | 2014-05-08 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/24921 |
Collection | 半导体超晶格国家重点实验室 |
Recommended Citation GB/T 7714 | Jia Xiaoyun,Feng Peng,Zhang Shengguang,Wu Nanjian,Zhao Baiqin and Liu Su. An ultra-low-power area-efficient non-volatile memory in a 0.18 μm single-poly CMOS process for passive RFID tags[J]. Journal of Semiconductors,2013,34(8):085004. |
APA | Jia Xiaoyun,Feng Peng,Zhang Shengguang,Wu Nanjian,Zhao Baiqin and Liu Su.(2013).An ultra-low-power area-efficient non-volatile memory in a 0.18 μm single-poly CMOS process for passive RFID tags.Journal of Semiconductors,34(8),085004. |
MLA | Jia Xiaoyun,Feng Peng,Zhang Shengguang,Wu Nanjian,Zhao Baiqin and Liu Su."An ultra-low-power area-efficient non-volatile memory in a 0.18 μm single-poly CMOS process for passive RFID tags".Journal of Semiconductors 34.8(2013):085004. |
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