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Ohmic contact to n-type Ge with compositional Ti nitride
H D Wu, W Huang, W F Lu, R F Tang, C Li, H K Lai, S Y Chen, and C L Xue
2013
Source PublicationApplied Surface Science
Volume284Pages:877-880
Subject Area光电子学
Indexed ByEI
Language英语
Date Available2014-05-08
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24920
Collection集成光电子学国家重点实验室
Recommended Citation
GB/T 7714
H D Wu, W Huang, W F Lu, R F Tang, C Li, H K Lai, S Y Chen, and C L Xue. Ohmic contact to n-type Ge with compositional Ti nitride[J]. Applied Surface Science,2013,284:877-880.
APA H D Wu, W Huang, W F Lu, R F Tang, C Li, H K Lai, S Y Chen, and C L Xue.(2013).Ohmic contact to n-type Ge with compositional Ti nitride.Applied Surface Science,284,877-880.
MLA H D Wu, W Huang, W F Lu, R F Tang, C Li, H K Lai, S Y Chen, and C L Xue."Ohmic contact to n-type Ge with compositional Ti nitride".Applied Surface Science 284(2013):877-880.
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