Ohmic contact to n-type Ge with compositional Ti nitride | |
H D Wu, W Huang, W F Lu, R F Tang, C Li, H K Lai, S Y Chen, and C L Xue | |
2013 | |
Source Publication | Applied Surface Science
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Volume | 284Pages:877-880 |
Subject Area | 光电子学 |
Indexed By | EI |
Language | 英语 |
Date Available | 2014-05-08 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/24920 |
Collection | 集成光电子学国家重点实验室 |
Recommended Citation GB/T 7714 | H D Wu, W Huang, W F Lu, R F Tang, C Li, H K Lai, S Y Chen, and C L Xue. Ohmic contact to n-type Ge with compositional Ti nitride[J]. Applied Surface Science,2013,284:877-880. |
APA | H D Wu, W Huang, W F Lu, R F Tang, C Li, H K Lai, S Y Chen, and C L Xue.(2013).Ohmic contact to n-type Ge with compositional Ti nitride.Applied Surface Science,284,877-880. |
MLA | H D Wu, W Huang, W F Lu, R F Tang, C Li, H K Lai, S Y Chen, and C L Xue."Ohmic contact to n-type Ge with compositional Ti nitride".Applied Surface Science 284(2013):877-880. |
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File Name/Size | DocType | Version | Access | License | ||
Ohmic contact to n-t(825KB) | 限制开放 | License | Application Full Text |
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