| Ohmic contact to n-type Ge with compositional Ti nitride | |
| H D Wu, W Huang, W F Lu, R F Tang, C Li, H K Lai, S Y Chen, and C L Xue | |
| 2013 | |
| Source Publication | Applied Surface Science
 |
| Volume | 284Pages:877-880 |
| Subject Area | 光电子学 |
| Indexed By | EI |
| Language | 英语 |
| Date Available | 2014-05-08 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/24920 |
| Collection | 集成光电子学国家重点实验室 |
| Recommended Citation GB/T 7714 | H D Wu, W Huang, W F Lu, R F Tang, C Li, H K Lai, S Y Chen, and C L Xue. Ohmic contact to n-type Ge with compositional Ti nitride[J]. Applied Surface Science,2013,284:877-880. |
| APA | H D Wu, W Huang, W F Lu, R F Tang, C Li, H K Lai, S Y Chen, and C L Xue.(2013).Ohmic contact to n-type Ge with compositional Ti nitride.Applied Surface Science,284,877-880. |
| MLA | H D Wu, W Huang, W F Lu, R F Tang, C Li, H K Lai, S Y Chen, and C L Xue."Ohmic contact to n-type Ge with compositional Ti nitride".Applied Surface Science 284(2013):877-880. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| Ohmic contact to n-t（825KB） | 限制开放 | License | Application Full Text | |||
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Edit Comment