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The effects of InGaN layer thickness on the performance of InGaN/GaN p - I - N solar cells
Li Liang, Zhao De-Gang, Jiang De-Sheng, Liu Zong-Shun, Chen Ping, Wu Liang-Liang, Le Ling-Cong, Wang Hui, Yang Hui
2013
Source PublicationChinese Physics B
Volume22Issue:6Pages:068802
Subject Area光电子学
Indexed ByEI
Language英语
Date Available2014-05-08
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24916
Collection集成光电子学国家重点实验室
Recommended Citation
GB/T 7714
Li Liang, Zhao De-Gang, Jiang De-Sheng, Liu Zong-Shun, Chen Ping, Wu Liang-Liang, Le Ling-Cong, Wang Hui, Yang Hui. The effects of InGaN layer thickness on the performance of InGaN/GaN p - I - N solar cells[J]. Chinese Physics B,2013,22(6):068802.
APA Li Liang, Zhao De-Gang, Jiang De-Sheng, Liu Zong-Shun, Chen Ping, Wu Liang-Liang, Le Ling-Cong, Wang Hui, Yang Hui.(2013).The effects of InGaN layer thickness on the performance of InGaN/GaN p - I - N solar cells.Chinese Physics B,22(6),068802.
MLA Li Liang, Zhao De-Gang, Jiang De-Sheng, Liu Zong-Shun, Chen Ping, Wu Liang-Liang, Le Ling-Cong, Wang Hui, Yang Hui."The effects of InGaN layer thickness on the performance of InGaN/GaN p - I - N solar cells".Chinese Physics B 22.6(2013):068802.
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