| The effects of InGaN layer thickness on the performance of InGaN/GaN p - I - N solar cells | |
| Li Liang, Zhao De-Gang, Jiang De-Sheng, Liu Zong-Shun, Chen Ping, Wu Liang-Liang, Le Ling-Cong, Wang Hui, Yang Hui | |
| 2013 | |
| Source Publication | Chinese Physics B
 |
| Volume | 22Issue:6Pages:068802 |
| Subject Area | 光电子学 |
| Indexed By | EI |
| Language | 英语 |
| Date Available | 2014-05-08 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/24916 |
| Collection | 集成光电子学国家重点实验室 |
| Recommended Citation GB/T 7714 | Li Liang, Zhao De-Gang, Jiang De-Sheng, Liu Zong-Shun, Chen Ping, Wu Liang-Liang, Le Ling-Cong, Wang Hui, Yang Hui. The effects of InGaN layer thickness on the performance of InGaN/GaN p - I - N solar cells[J]. Chinese Physics B,2013,22(6):068802. |
| APA | Li Liang, Zhao De-Gang, Jiang De-Sheng, Liu Zong-Shun, Chen Ping, Wu Liang-Liang, Le Ling-Cong, Wang Hui, Yang Hui.(2013).The effects of InGaN layer thickness on the performance of InGaN/GaN p - I - N solar cells.Chinese Physics B,22(6),068802. |
| MLA | Li Liang, Zhao De-Gang, Jiang De-Sheng, Liu Zong-Shun, Chen Ping, Wu Liang-Liang, Le Ling-Cong, Wang Hui, Yang Hui."The effects of InGaN layer thickness on the performance of InGaN/GaN p - I - N solar cells".Chinese Physics B 22.6(2013):068802. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| The effects of InGaN（342KB） | 限制开放 | License | Application Full Text | |||
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