The effects of InGaN layer thickness on the performance of InGaN/GaN p - I - N solar cells | |
Li Liang, Zhao De-Gang, Jiang De-Sheng, Liu Zong-Shun, Chen Ping, Wu Liang-Liang, Le Ling-Cong, Wang Hui, Yang Hui | |
2013 | |
Source Publication | Chinese Physics B
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Volume | 22Issue:6Pages:068802 |
Subject Area | 光电子学 |
Indexed By | EI |
Language | 英语 |
Date Available | 2014-05-08 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/24916 |
Collection | 集成光电子学国家重点实验室 |
Recommended Citation GB/T 7714 | Li Liang, Zhao De-Gang, Jiang De-Sheng, Liu Zong-Shun, Chen Ping, Wu Liang-Liang, Le Ling-Cong, Wang Hui, Yang Hui. The effects of InGaN layer thickness on the performance of InGaN/GaN p - I - N solar cells[J]. Chinese Physics B,2013,22(6):068802. |
APA | Li Liang, Zhao De-Gang, Jiang De-Sheng, Liu Zong-Shun, Chen Ping, Wu Liang-Liang, Le Ling-Cong, Wang Hui, Yang Hui.(2013).The effects of InGaN layer thickness on the performance of InGaN/GaN p - I - N solar cells.Chinese Physics B,22(6),068802. |
MLA | Li Liang, Zhao De-Gang, Jiang De-Sheng, Liu Zong-Shun, Chen Ping, Wu Liang-Liang, Le Ling-Cong, Wang Hui, Yang Hui."The effects of InGaN layer thickness on the performance of InGaN/GaN p - I - N solar cells".Chinese Physics B 22.6(2013):068802. |
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