Low-temperature electron mobility in heavily n-doped junctionless nanowire transistor | |
Li, Xiaoming; Han, Weihua; Wang, Hao; Ma, Liuhong; Zhang, Yanbo; Du, Yandong; Yang, Fuhua | |
2013 | |
Source Publication | Applied Physics Letters
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Volume | 102Issue:22Pages:223507 |
Subject Area | 微电子学 |
Indexed By | EI |
Language | 英语 |
Date Available | 2014-05-08 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/24915 |
Collection | 半导体集成技术工程研究中心 |
Recommended Citation GB/T 7714 | Li, Xiaoming,Han, Weihua,Wang, Hao,et al. Low-temperature electron mobility in heavily n-doped junctionless nanowire transistor[J]. Applied Physics Letters,2013,102(22):223507. |
APA | Li, Xiaoming.,Han, Weihua.,Wang, Hao.,Ma, Liuhong.,Zhang, Yanbo.,...&Yang, Fuhua.(2013).Low-temperature electron mobility in heavily n-doped junctionless nanowire transistor.Applied Physics Letters,102(22),223507. |
MLA | Li, Xiaoming,et al."Low-temperature electron mobility in heavily n-doped junctionless nanowire transistor".Applied Physics Letters 102.22(2013):223507. |
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