| Low-temperature electron mobility in heavily n-doped junctionless nanowire transistor | |
| Li, Xiaoming; Han, Weihua; Wang, Hao; Ma, Liuhong; Zhang, Yanbo; Du, Yandong; Yang, Fuhua | |
| 2013 | |
| Source Publication | Applied Physics Letters
 |
| Volume | 102Issue:22Pages:223507 |
| Subject Area | 微电子学 |
| Indexed By | EI |
| Language | 英语 |
| Date Available | 2014-05-08 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/24915 |
| Collection | 半导体集成技术工程研究中心 |
| Recommended Citation GB/T 7714 | Li, Xiaoming,Han, Weihua,Wang, Hao,et al. Low-temperature electron mobility in heavily n-doped junctionless nanowire transistor[J]. Applied Physics Letters,2013,102(22):223507. |
| APA | Li, Xiaoming.,Han, Weihua.,Wang, Hao.,Ma, Liuhong.,Zhang, Yanbo.,...&Yang, Fuhua.(2013).Low-temperature electron mobility in heavily n-doped junctionless nanowire transistor.Applied Physics Letters,102(22),223507. |
| MLA | Li, Xiaoming,et al."Low-temperature electron mobility in heavily n-doped junctionless nanowire transistor".Applied Physics Letters 102.22(2013):223507. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| Low-temperature elec（828KB） | 限制开放 | License | Application Full Text | |||
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Edit Comment