| Saturation of the junction voltage in GaN-based laser diodes | |
| Feng, M.X.; Liu, J.P.; Zhang, S.M.; Liu, Z.S.; Jiang, D.S.; Li, Z.C.; Wang, F.; Li, D.Y.; Zhang, L.Q.; Wang, H.; Yang, H. | |
| 2013 | |
| Source Publication | Applied Physics Letters
 |
| Volume | 102Issue:18Pages:183509 |
| Subject Area | 光电子学 |
| Indexed By | EI |
| Language | 英语 |
| Date Available | 2014-05-08 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/24914 |
| Collection | 集成光电子学国家重点实验室 |
| Recommended Citation GB/T 7714 | Feng, M.X.,Liu, J.P.,Zhang, S.M.,et al. Saturation of the junction voltage in GaN-based laser diodes[J]. Applied Physics Letters,2013,102(18):183509. |
| APA | Feng, M.X..,Liu, J.P..,Zhang, S.M..,Liu, Z.S..,Jiang, D.S..,...&Yang, H..(2013).Saturation of the junction voltage in GaN-based laser diodes.Applied Physics Letters,102(18),183509. |
| MLA | Feng, M.X.,et al."Saturation of the junction voltage in GaN-based laser diodes".Applied Physics Letters 102.18(2013):183509. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| Saturation of the ju（576KB） | 限制开放 | License | Application Full Text | |||
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