| Enhanced light extraction of InGaN LEDs with photonic crystals grown on p-GaN using selective-area epitaxy and nanospherical-lens photolithography | |
| Zhao, Linghui; Wei, Tongbo; Wang, Junxi; Yan, Qingfeng; Zeng, Yiping; Li, Jinmin | |
| 2013 | |
| Source Publication | Journal of Semiconductors
 |
| Volume | 34Issue:10Pages:104005 |
| Subject Area | 半导体器件 |
| Indexed By | EI |
| Language | 英语 |
| Date Available | 2014-05-08 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/24905 |
| Collection | 中科院半导体照明研发中心 |
| Recommended Citation GB/T 7714 | Zhao, Linghui,Wei, Tongbo,Wang, Junxi,et al. Enhanced light extraction of InGaN LEDs with photonic crystals grown on p-GaN using selective-area epitaxy and nanospherical-lens photolithography[J]. Journal of Semiconductors,2013,34(10):104005. |
| APA | Zhao, Linghui,Wei, Tongbo,Wang, Junxi,Yan, Qingfeng,Zeng, Yiping,&Li, Jinmin.(2013).Enhanced light extraction of InGaN LEDs with photonic crystals grown on p-GaN using selective-area epitaxy and nanospherical-lens photolithography.Journal of Semiconductors,34(10),104005. |
| MLA | Zhao, Linghui,et al."Enhanced light extraction of InGaN LEDs with photonic crystals grown on p-GaN using selective-area epitaxy and nanospherical-lens photolithography".Journal of Semiconductors 34.10(2013):104005. |
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| File Name/Size | DocType | Version | Access | License | ||
| Enhanced light extra（3945KB） | 限制开放 | License | Application Full Text | |||
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