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Enhanced light extraction of InGaN LEDs with photonic crystals grown on p-GaN using selective-area epitaxy and nanospherical-lens photolithography
Zhao, Linghui; Wei, Tongbo; Wang, Junxi; Yan, Qingfeng; Zeng, Yiping; Li, Jinmin
2013
Source PublicationJournal of Semiconductors
Volume34Issue:10Pages:104005
Subject Area半导体器件
Indexed ByEI
Language英语
Date Available2014-05-08
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24905
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
Zhao, Linghui,Wei, Tongbo,Wang, Junxi,et al. Enhanced light extraction of InGaN LEDs with photonic crystals grown on p-GaN using selective-area epitaxy and nanospherical-lens photolithography[J]. Journal of Semiconductors,2013,34(10):104005.
APA Zhao, Linghui,Wei, Tongbo,Wang, Junxi,Yan, Qingfeng,Zeng, Yiping,&Li, Jinmin.(2013).Enhanced light extraction of InGaN LEDs with photonic crystals grown on p-GaN using selective-area epitaxy and nanospherical-lens photolithography.Journal of Semiconductors,34(10),104005.
MLA Zhao, Linghui,et al."Enhanced light extraction of InGaN LEDs with photonic crystals grown on p-GaN using selective-area epitaxy and nanospherical-lens photolithography".Journal of Semiconductors 34.10(2013):104005.
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