SEMI OpenIR  > 中科院半导体材料科学重点实验室
10 × 100 mm 4H-SiC epitaxial growth by warm-wall planetary reactor
Lin Dong, Guo Sheng Sun, Jun Yu, Guo Guo Yan, Wan Shun Zhao, Lei Wang, Xin He Zhang, Xi Guang Li, Zhan Guo Wang
2013
Source PublicationMaterials Science Forum
Volume740-742Pages:239-242
Subject Area半导体材料
Indexed ByEI
Language英语
Date Available2014-05-08
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24898
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Lin Dong, Guo Sheng Sun, Jun Yu, Guo Guo Yan, Wan Shun Zhao, Lei Wang, Xin He Zhang, Xi Guang Li, Zhan Guo Wang. 10 × 100 mm 4H-SiC epitaxial growth by warm-wall planetary reactor[J]. Materials Science Forum,2013,740-742:239-242.
APA Lin Dong, Guo Sheng Sun, Jun Yu, Guo Guo Yan, Wan Shun Zhao, Lei Wang, Xin He Zhang, Xi Guang Li, Zhan Guo Wang.(2013).10 × 100 mm 4H-SiC epitaxial growth by warm-wall planetary reactor.Materials Science Forum,740-742,239-242.
MLA Lin Dong, Guo Sheng Sun, Jun Yu, Guo Guo Yan, Wan Shun Zhao, Lei Wang, Xin He Zhang, Xi Guang Li, Zhan Guo Wang."10 × 100 mm 4H-SiC epitaxial growth by warm-wall planetary reactor".Materials Science Forum 740-742(2013):239-242.
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