SEMI OpenIR  > 中科院半导体材料科学重点实验室
Formation of single crystalline tellurium supersaturated silicon pn junctions by ion implantation followed by pulsed laser melting
Wang Xiyuan,Huang Yongguang,Liu Dewei,Zhu Xiaoning,Cui Xiao and Zhu Hongliang
2013
Source PublicationJournal of Semiconductors
Volume34Issue:6Pages:063001
Subject Area半导体材料
Indexed ByEI
Language英语
Date Available2014-05-08
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24897
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Wang Xiyuan,Huang Yongguang,Liu Dewei,Zhu Xiaoning,Cui Xiao and Zhu Hongliang. Formation of single crystalline tellurium supersaturated silicon pn junctions by ion implantation followed by pulsed laser melting[J]. Journal of Semiconductors,2013,34(6):063001.
APA Wang Xiyuan,Huang Yongguang,Liu Dewei,Zhu Xiaoning,Cui Xiao and Zhu Hongliang.(2013).Formation of single crystalline tellurium supersaturated silicon pn junctions by ion implantation followed by pulsed laser melting.Journal of Semiconductors,34(6),063001.
MLA Wang Xiyuan,Huang Yongguang,Liu Dewei,Zhu Xiaoning,Cui Xiao and Zhu Hongliang."Formation of single crystalline tellurium supersaturated silicon pn junctions by ion implantation followed by pulsed laser melting".Journal of Semiconductors 34.6(2013):063001.
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