SEMI OpenIR  > 中科院半导体材料科学重点实验室
Dielectric and barrier thickness fluctuation scattering in Al 2O3/AlGaN/GaN double heterojunction high-electron mobility transistors
Dong Ji, Yanwu Lu, Bing Liu, Guipeng Liu, Qinsheng Zhu, Zhanguo Wang
2013
Source PublicationThin Solid Films
Volume534Pages:655–658
Subject Area半导体材料
Indexed ByEI
Language英语
Date Available2014-05-08
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24895
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Dong Ji, Yanwu Lu, Bing Liu, Guipeng Liu, Qinsheng Zhu, Zhanguo Wang. Dielectric and barrier thickness fluctuation scattering in Al 2O3/AlGaN/GaN double heterojunction high-electron mobility transistors[J]. Thin Solid Films,2013,534:655–658.
APA Dong Ji, Yanwu Lu, Bing Liu, Guipeng Liu, Qinsheng Zhu, Zhanguo Wang.(2013).Dielectric and barrier thickness fluctuation scattering in Al 2O3/AlGaN/GaN double heterojunction high-electron mobility transistors.Thin Solid Films,534,655–658.
MLA Dong Ji, Yanwu Lu, Bing Liu, Guipeng Liu, Qinsheng Zhu, Zhanguo Wang."Dielectric and barrier thickness fluctuation scattering in Al 2O3/AlGaN/GaN double heterojunction high-electron mobility transistors".Thin Solid Films 534(2013):655–658.
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