SEMI OpenIR  > 中科院半导体材料科学重点实验室
The growth and characterization of GaN films on cone-shaped patterned sapphire by MOCVD
Liang, Jing; Hongling, Xiao; Xiaoliang, Wang; Cuimei, Wang; Qingwen, Deng; Zhidong, Li; Jieqin, Ding; Zhanguo, Wang; Xun, Hou
2013
Source PublicationJournal of Semiconductors
Volume34Issue:11Pages:113002
Subject Area半导体材料
Indexed ByEI
Language英语
Date Available2014-04-30
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24868
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Liang, Jing,Hongling, Xiao,Xiaoliang, Wang,et al. The growth and characterization of GaN films on cone-shaped patterned sapphire by MOCVD[J]. Journal of Semiconductors,2013,34(11):113002.
APA Liang, Jing.,Hongling, Xiao.,Xiaoliang, Wang.,Cuimei, Wang.,Qingwen, Deng.,...&Xun, Hou.(2013).The growth and characterization of GaN films on cone-shaped patterned sapphire by MOCVD.Journal of Semiconductors,34(11),113002.
MLA Liang, Jing,et al."The growth and characterization of GaN films on cone-shaped patterned sapphire by MOCVD".Journal of Semiconductors 34.11(2013):113002.
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