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An RF LDMOS with excellent efficiency and ruggedness based on a modified CMOS process
Yu, Ting; Luo, Ling
2013
Source PublicationJournal of Semiconductors
Volume34Issue:9Pages:094007
Subject Area光电子学
Indexed ByEI
Language英语
Date Available2014-04-30
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24859
Collection集成光电子学国家重点实验室
Recommended Citation
GB/T 7714
Yu, Ting,Luo, Ling. An RF LDMOS with excellent efficiency and ruggedness based on a modified CMOS process[J]. Journal of Semiconductors,2013,34(9):094007.
APA Yu, Ting,&Luo, Ling.(2013).An RF LDMOS with excellent efficiency and ruggedness based on a modified CMOS process.Journal of Semiconductors,34(9),094007.
MLA Yu, Ting,et al."An RF LDMOS with excellent efficiency and ruggedness based on a modified CMOS process".Journal of Semiconductors 34.9(2013):094007.
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