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High power single mode 980 nm AlGaInAs/AlGaAs quantum well lasers with a very low threshold current
Zhen, Dong; Cuiluan, Wang; Hongqi, Jing; Suping, Liu; Xiaoyu, Ma
2013
Source PublicationJournal of Semiconductors
Volume34Issue:11Pages:114011
Subject Area半导体器件
Indexed ByEI
Language英语
Date Available2014-04-30
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24851
Collection光电子器件国家工程中心
Recommended Citation
GB/T 7714
Zhen, Dong,Cuiluan, Wang,Hongqi, Jing,et al. High power single mode 980 nm AlGaInAs/AlGaAs quantum well lasers with a very low threshold current[J]. Journal of Semiconductors,2013,34(11):114011.
APA Zhen, Dong,Cuiluan, Wang,Hongqi, Jing,Suping, Liu,&Xiaoyu, Ma.(2013).High power single mode 980 nm AlGaInAs/AlGaAs quantum well lasers with a very low threshold current.Journal of Semiconductors,34(11),114011.
MLA Zhen, Dong,et al."High power single mode 980 nm AlGaInAs/AlGaAs quantum well lasers with a very low threshold current".Journal of Semiconductors 34.11(2013):114011.
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