SEMI OpenIR  > 中科院半导体材料科学重点实验室
Study on proton irradiation induced defects in GaN thick film
Zhang Ming-Lan, Yang Rui-Xia, Li Zhuo-Xin, Cao Xing-Zhong, Wang Bao-Yi, Wang Xiao-Hui
2013
Source PublicationActa Physica Sinica
Volume62Issue:11Pages:117103
Subject Area半导体材料
Indexed ByEI
Language英语
Date Available2014-04-30
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24847
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Zhang Ming-Lan, Yang Rui-Xia, Li Zhuo-Xin, Cao Xing-Zhong, Wang Bao-Yi, Wang Xiao-Hui. Study on proton irradiation induced defects in GaN thick film[J]. Acta Physica Sinica,2013,62(11):117103.
APA Zhang Ming-Lan, Yang Rui-Xia, Li Zhuo-Xin, Cao Xing-Zhong, Wang Bao-Yi, Wang Xiao-Hui.(2013).Study on proton irradiation induced defects in GaN thick film.Acta Physica Sinica,62(11),117103.
MLA Zhang Ming-Lan, Yang Rui-Xia, Li Zhuo-Xin, Cao Xing-Zhong, Wang Bao-Yi, Wang Xiao-Hui."Study on proton irradiation induced defects in GaN thick film".Acta Physica Sinica 62.11(2013):117103.
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