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Effect of doping on the photoluminescence of multilayer Ge quantum dots deposited on Si(001) substrate
Liu Zhi, Li Ya-Ming, Xue Chun-Lai, Cheng Bu-Wen, Wang Qi-Ming
2013
Source PublicationActa Physica Sinica
Volume62Issue:7Pages:076108
Subject Area光电子学
Indexed ByEI
Language英语
Date Available2014-04-30
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24845
Collection集成光电子学国家重点实验室
Recommended Citation
GB/T 7714
Liu Zhi, Li Ya-Ming, Xue Chun-Lai, Cheng Bu-Wen, Wang Qi-Ming. Effect of doping on the photoluminescence of multilayer Ge quantum dots deposited on Si(001) substrate[J]. Acta Physica Sinica,2013,62(7):076108.
APA Liu Zhi, Li Ya-Ming, Xue Chun-Lai, Cheng Bu-Wen, Wang Qi-Ming.(2013).Effect of doping on the photoluminescence of multilayer Ge quantum dots deposited on Si(001) substrate.Acta Physica Sinica,62(7),076108.
MLA Liu Zhi, Li Ya-Ming, Xue Chun-Lai, Cheng Bu-Wen, Wang Qi-Ming."Effect of doping on the photoluminescence of multilayer Ge quantum dots deposited on Si(001) substrate".Acta Physica Sinica 62.7(2013):076108.
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