SEMI OpenIR  > 集成光电子学国家重点实验室
Design of 1-THz field effect transistor detectors in 180-nm standard CMOS process
Liu, Zhao-Yang; Liu, Li-Yuan; Wu, Nan-Jian
2013
Source PublicationProceedings of SPIE - The International Society for Optical Engineering
Volume8909Pages:89091E
Subject Area半导体材料
Indexed ByEI
Language英语
Date Available2014-04-28
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24815
Collection集成光电子学国家重点实验室
Recommended Citation
GB/T 7714
Liu, Zhao-Yang,Liu, Li-Yuan,Wu, Nan-Jian. Design of 1-THz field effect transistor detectors in 180-nm standard CMOS process[J]. Proceedings of SPIE - The International Society for Optical Engineering,2013,8909:89091E.
APA Liu, Zhao-Yang,Liu, Li-Yuan,&Wu, Nan-Jian.(2013).Design of 1-THz field effect transistor detectors in 180-nm standard CMOS process.Proceedings of SPIE - The International Society for Optical Engineering,8909,89091E.
MLA Liu, Zhao-Yang,et al."Design of 1-THz field effect transistor detectors in 180-nm standard CMOS process".Proceedings of SPIE - The International Society for Optical Engineering 8909(2013):89091E.
Files in This Item:
File Name/Size DocType Version Access License
Design of 1-THz fiel(1435KB) 限制开放LicenseApplication Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Liu, Zhao-Yang]'s Articles
[Liu, Li-Yuan]'s Articles
[Wu, Nan-Jian]'s Articles
Baidu academic
Similar articles in Baidu academic
[Liu, Zhao-Yang]'s Articles
[Liu, Li-Yuan]'s Articles
[Wu, Nan-Jian]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Liu, Zhao-Yang]'s Articles
[Liu, Li-Yuan]'s Articles
[Wu, Nan-Jian]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.