SEMI OpenIR  > 中科院半导体材料科学重点实验室
MBE growth of 2.3m InGaAsSb/AlGaAsSb strained multiple quantum well diode lasers
Zhang, Tiancheng; Ni, Qinfei; Liu, Xuezhen; Yu, Bin; Wang, Yuxia; Zhang, Yu; Ma, Xunpeng; Wang, Yongbin; Xu, Yun
2013
Source PublicationKey Engineering Materials
Volume552Pages:389-392
Subject Area半导体材料
Indexed ByEI
Language英语
Date Available2014-04-28
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24814
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Zhang, Tiancheng,Ni, Qinfei,Liu, Xuezhen,et al. MBE growth of 2.3m InGaAsSb/AlGaAsSb strained multiple quantum well diode lasers[J]. Key Engineering Materials,2013,552:389-392.
APA Zhang, Tiancheng.,Ni, Qinfei.,Liu, Xuezhen.,Yu, Bin.,Wang, Yuxia.,...&Xu, Yun.(2013).MBE growth of 2.3m InGaAsSb/AlGaAsSb strained multiple quantum well diode lasers.Key Engineering Materials,552,389-392.
MLA Zhang, Tiancheng,et al."MBE growth of 2.3m InGaAsSb/AlGaAsSb strained multiple quantum well diode lasers".Key Engineering Materials 552(2013):389-392.
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