| MBE growth of 2.3m InGaAsSb/AlGaAsSb strained multiple quantum well diode lasers | |
| Zhang, Tiancheng; Ni, Qinfei; Liu, Xuezhen; Yu, Bin; Wang, Yuxia; Zhang, Yu; Ma, Xunpeng; Wang, Yongbin; Xu, Yun | |
| 2013 | |
| Source Publication | Key Engineering Materials
 |
| Volume | 552Pages:389-392 |
| Subject Area | 半导体材料 |
| Indexed By | EI |
| Language | 英语 |
| Date Available | 2014-04-28 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/24814 |
| Collection | 中科院半导体材料科学重点实验室 |
| Recommended Citation GB/T 7714 | Zhang, Tiancheng,Ni, Qinfei,Liu, Xuezhen,et al. MBE growth of 2.3m InGaAsSb/AlGaAsSb strained multiple quantum well diode lasers[J]. Key Engineering Materials,2013,552:389-392. |
| APA | Zhang, Tiancheng.,Ni, Qinfei.,Liu, Xuezhen.,Yu, Bin.,Wang, Yuxia.,...&Xu, Yun.(2013).MBE growth of 2.3m InGaAsSb/AlGaAsSb strained multiple quantum well diode lasers.Key Engineering Materials,552,389-392. |
| MLA | Zhang, Tiancheng,et al."MBE growth of 2.3m InGaAsSb/AlGaAsSb strained multiple quantum well diode lasers".Key Engineering Materials 552(2013):389-392. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| MBE Growth of 2.3μm （324KB） | 限制开放 | License | Application Full Text | |||
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