| Enhanced Optical Property of InGaN Light-Emitting Diodes with SiO 2 Nano-Bowl Photonic Crystal by Nanosphere Lithography | |
| Haiyang Zheng and Kui Wu | |
| 2013 | |
| Source Publication | ECS Solid State Lett.
 |
| Volume | 2Issue:7Pages:Q51-Q53 |
| Subject Area | 半导体器件 |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2014-04-09 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/24795 |
| Collection | 中科院半导体照明研发中心 |
| Recommended Citation GB/T 7714 | Haiyang Zheng and Kui Wu. Enhanced Optical Property of InGaN Light-Emitting Diodes with SiO 2 Nano-Bowl Photonic Crystal by Nanosphere Lithography[J]. ECS Solid State Lett.,2013,2(7):Q51-Q53. |
| APA | Haiyang Zheng and Kui Wu.(2013).Enhanced Optical Property of InGaN Light-Emitting Diodes with SiO 2 Nano-Bowl Photonic Crystal by Nanosphere Lithography.ECS Solid State Lett.,2(7),Q51-Q53. |
| MLA | Haiyang Zheng and Kui Wu."Enhanced Optical Property of InGaN Light-Emitting Diodes with SiO 2 Nano-Bowl Photonic Crystal by Nanosphere Lithography".ECS Solid State Lett. 2.7(2013):Q51-Q53. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| Enhanced Optical Pro（777KB） | 限制开放 | License | Application Full Text | |||
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Edit Comment