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Enhanced Optical Property of InGaN Light-Emitting Diodes with SiO 2 Nano-Bowl Photonic Crystal by Nanosphere Lithography
Haiyang Zheng and Kui Wu
2013
Source PublicationECS Solid State Lett.
Volume2Issue:7Pages:Q51-Q53
Subject Area半导体器件
Indexed BySCI
Language英语
Date Available2014-04-09
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24795
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
Haiyang Zheng and Kui Wu. Enhanced Optical Property of InGaN Light-Emitting Diodes with SiO 2 Nano-Bowl Photonic Crystal by Nanosphere Lithography[J]. ECS Solid State Lett.,2013,2(7):Q51-Q53.
APA Haiyang Zheng and Kui Wu.(2013).Enhanced Optical Property of InGaN Light-Emitting Diodes with SiO 2 Nano-Bowl Photonic Crystal by Nanosphere Lithography.ECS Solid State Lett.,2(7),Q51-Q53.
MLA Haiyang Zheng and Kui Wu."Enhanced Optical Property of InGaN Light-Emitting Diodes with SiO 2 Nano-Bowl Photonic Crystal by Nanosphere Lithography".ECS Solid State Lett. 2.7(2013):Q51-Q53.
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