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Enhanced Light Emission of InGaN Light-Emitting-Diodes by Nanosphere Lithography Generated Photonic Crystals with Different Geometries
Haiyang Zheng and Kui Wu
2013
Source PublicationECS J. Solid State Sci. Technol.
Volume2Issue:11Pages:R241-R244
Subject Area半导体器件
Indexed BySCI
Language英语
Date Available2014-04-09
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24794
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
Haiyang Zheng and Kui Wu. Enhanced Light Emission of InGaN Light-Emitting-Diodes by Nanosphere Lithography Generated Photonic Crystals with Different Geometries[J]. ECS J. Solid State Sci. Technol.,2013,2(11):R241-R244.
APA Haiyang Zheng and Kui Wu.(2013).Enhanced Light Emission of InGaN Light-Emitting-Diodes by Nanosphere Lithography Generated Photonic Crystals with Different Geometries.ECS J. Solid State Sci. Technol.,2(11),R241-R244.
MLA Haiyang Zheng and Kui Wu."Enhanced Light Emission of InGaN Light-Emitting-Diodes by Nanosphere Lithography Generated Photonic Crystals with Different Geometries".ECS J. Solid State Sci. Technol. 2.11(2013):R241-R244.
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