SEMI OpenIR  > 中科院半导体照明研发中心
Light extraction improvement of InGaN light-emitting diodes with large-area highly ordered ITO nanobowls photonic crystal via self-assembled nanosphere lithography
Wu K; Zhang YY; Wei TB; Lan D; Sun B; Zheng HY; Lu HX; Chen Y; Wang JX; Luo Y; Li JM
2013
Source PublicationAIP ADVANCES
Volume3Pages:092124
Subject Area半导体器件
Indexed BySCI
Language英语
Date Available2014-04-09
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24790
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
Wu K,Zhang YY,Wei TB,et al. Light extraction improvement of InGaN light-emitting diodes with large-area highly ordered ITO nanobowls photonic crystal via self-assembled nanosphere lithography[J]. AIP ADVANCES,2013,3:092124.
APA Wu K.,Zhang YY.,Wei TB.,Lan D.,Sun B.,...&Li JM.(2013).Light extraction improvement of InGaN light-emitting diodes with large-area highly ordered ITO nanobowls photonic crystal via self-assembled nanosphere lithography.AIP ADVANCES,3,092124.
MLA Wu K,et al."Light extraction improvement of InGaN light-emitting diodes with large-area highly ordered ITO nanobowls photonic crystal via self-assembled nanosphere lithography".AIP ADVANCES 3(2013):092124.
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