SEMI OpenIR  > 中科院半导体照明研发中心
Mechanisms in Thermal Stress Aided Electroless Etching of GaN Grown on Sapphire and Approaches to Vertical Devices
Liancheng Wang, Zhiqiang Liu, Haiyang Zheng, Yiyun Zhang, Yan Cheng, Haizhong Xie, Liqiang Rao, Tongbo Wei, Hua Yang, Guodong Yuan, Xiaoyan Yi and Guohong Wang
2013
Source PublicationRSC Adv.
Volume3Pages:10934-10943
Subject Area半导体器件
Indexed BySCI
Language英语
Date Available2014-04-09
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24788
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
Liancheng Wang, Zhiqiang Liu, Haiyang Zheng, Yiyun Zhang, Yan Cheng, Haizhong Xie, Liqiang Rao, Tongbo Wei, Hua Yang, Guodong Yuan, Xiaoyan Yi and Guohong Wang. Mechanisms in Thermal Stress Aided Electroless Etching of GaN Grown on Sapphire and Approaches to Vertical Devices[J]. RSC Adv.,2013,3:10934-10943.
APA Liancheng Wang, Zhiqiang Liu, Haiyang Zheng, Yiyun Zhang, Yan Cheng, Haizhong Xie, Liqiang Rao, Tongbo Wei, Hua Yang, Guodong Yuan, Xiaoyan Yi and Guohong Wang.(2013).Mechanisms in Thermal Stress Aided Electroless Etching of GaN Grown on Sapphire and Approaches to Vertical Devices.RSC Adv.,3,10934-10943.
MLA Liancheng Wang, Zhiqiang Liu, Haiyang Zheng, Yiyun Zhang, Yan Cheng, Haizhong Xie, Liqiang Rao, Tongbo Wei, Hua Yang, Guodong Yuan, Xiaoyan Yi and Guohong Wang."Mechanisms in Thermal Stress Aided Electroless Etching of GaN Grown on Sapphire and Approaches to Vertical Devices".RSC Adv. 3(2013):10934-10943.
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