SEMI OpenIR  > 中科院半导体照明研发中心
Modification of Carrier Distribution in Dual-Wavelength Light-Emitting Diodes by Specified Mg Doped Barrier
Zhao Si, Tongbo Wei, Jun Ma, Jianchang Yan, Xuecheng Wei, Hongxi Lu, Binglei Fu, Shaoxin Zhu, Zhe Liu, Junxi Wang and Jinmin Li
2013
Source PublicationECS Solid State Lett.
Volume2Issue:10Pages:R37-R39
Subject Area半导体器件
Indexed BySCI
Language英语
Date Available2014-04-09
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24786
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
Zhao Si, Tongbo Wei, Jun Ma, Jianchang Yan, Xuecheng Wei, Hongxi Lu, Binglei Fu, Shaoxin Zhu, Zhe Liu, Junxi Wang and Jinmin Li. Modification of Carrier Distribution in Dual-Wavelength Light-Emitting Diodes by Specified Mg Doped Barrier[J]. ECS Solid State Lett.,2013,2(10):R37-R39.
APA Zhao Si, Tongbo Wei, Jun Ma, Jianchang Yan, Xuecheng Wei, Hongxi Lu, Binglei Fu, Shaoxin Zhu, Zhe Liu, Junxi Wang and Jinmin Li.(2013).Modification of Carrier Distribution in Dual-Wavelength Light-Emitting Diodes by Specified Mg Doped Barrier.ECS Solid State Lett.,2(10),R37-R39.
MLA Zhao Si, Tongbo Wei, Jun Ma, Jianchang Yan, Xuecheng Wei, Hongxi Lu, Binglei Fu, Shaoxin Zhu, Zhe Liu, Junxi Wang and Jinmin Li."Modification of Carrier Distribution in Dual-Wavelength Light-Emitting Diodes by Specified Mg Doped Barrier".ECS Solid State Lett. 2.10(2013):R37-R39.
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