| Improved hole distribution in InGaN-GaN dual-wavelength light-emitting diodes with Mg-doped quantum-wells | |
| Zhao Si, Tongbo Wei, Jianchang Yan, Jun Ma, Ning Zhang, Zhe Liu, Xuecheng Wei, Xiaodong Wang, Hongxi Lu, Junxi Wang, Jinmin Li | |
| 2013 | |
| Source Publication | physica status solidi (a)
 |
| Volume | 210Issue:3Pages:559-562 |
| Subject Area | 半导体器件 |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2014-04-09 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/24785 |
| Collection | 中科院半导体照明研发中心 |
| Recommended Citation GB/T 7714 | Zhao Si, Tongbo Wei, Jianchang Yan, Jun Ma, Ning Zhang, Zhe Liu, Xuecheng Wei, Xiaodong Wang, Hongxi Lu, Junxi Wang, Jinmin Li. Improved hole distribution in InGaN-GaN dual-wavelength light-emitting diodes with Mg-doped quantum-wells[J]. physica status solidi (a),2013,210(3):559-562. |
| APA | Zhao Si, Tongbo Wei, Jianchang Yan, Jun Ma, Ning Zhang, Zhe Liu, Xuecheng Wei, Xiaodong Wang, Hongxi Lu, Junxi Wang, Jinmin Li.(2013).Improved hole distribution in InGaN-GaN dual-wavelength light-emitting diodes with Mg-doped quantum-wells.physica status solidi (a),210(3),559-562. |
| MLA | Zhao Si, Tongbo Wei, Jianchang Yan, Jun Ma, Ning Zhang, Zhe Liu, Xuecheng Wei, Xiaodong Wang, Hongxi Lu, Junxi Wang, Jinmin Li."Improved hole distribution in InGaN-GaN dual-wavelength light-emitting diodes with Mg-doped quantum-wells".physica status solidi (a) 210.3(2013):559-562. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| Improved hole distri（2269KB） | 限制开放 | License | Application Full Text | |||
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