SEMI OpenIR  > 中科院半导体照明研发中心
Improved hole distribution in InGaN-GaN dual-wavelength light-emitting diodes with Mg-doped quantum-wells
Zhao Si, Tongbo Wei, Jianchang Yan, Jun Ma, Ning Zhang, Zhe Liu, Xuecheng Wei, Xiaodong Wang, Hongxi Lu, Junxi Wang, Jinmin Li
2013
Source Publicationphysica status solidi (a)
Volume210Issue:3Pages:559-562
Subject Area半导体器件
Indexed BySCI
Language英语
Date Available2014-04-09
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24785
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
Zhao Si, Tongbo Wei, Jianchang Yan, Jun Ma, Ning Zhang, Zhe Liu, Xuecheng Wei, Xiaodong Wang, Hongxi Lu, Junxi Wang, Jinmin Li. Improved hole distribution in InGaN-GaN dual-wavelength light-emitting diodes with Mg-doped quantum-wells[J]. physica status solidi (a),2013,210(3):559-562.
APA Zhao Si, Tongbo Wei, Jianchang Yan, Jun Ma, Ning Zhang, Zhe Liu, Xuecheng Wei, Xiaodong Wang, Hongxi Lu, Junxi Wang, Jinmin Li.(2013).Improved hole distribution in InGaN-GaN dual-wavelength light-emitting diodes with Mg-doped quantum-wells.physica status solidi (a),210(3),559-562.
MLA Zhao Si, Tongbo Wei, Jianchang Yan, Jun Ma, Ning Zhang, Zhe Liu, Xuecheng Wei, Xiaodong Wang, Hongxi Lu, Junxi Wang, Jinmin Li."Improved hole distribution in InGaN-GaN dual-wavelength light-emitting diodes with Mg-doped quantum-wells".physica status solidi (a) 210.3(2013):559-562.
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