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Analysis Model for Efficiency Droop of InGaN Light-Emitting Diodes Based on Reduced Effective Volume of Active Region by Carrier Localization
Hongjian Li, Panpan Li, Junjie Kang, Zhi Li, Yiyun Zhang, Meng Liang, Zhicong Li, Jing Li, Xiaoyan Yi and Guohong Wang
2013
Source PublicationApplied Physics Express
Volume6Issue:9Pages:092101
Subject Area半导体器件
Indexed BySCI
Language英语
Date Available2014-04-09
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24776
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
Hongjian Li, Panpan Li, Junjie Kang, Zhi Li, Yiyun Zhang, Meng Liang, Zhicong Li, Jing Li, Xiaoyan Yi and Guohong Wang. Analysis Model for Efficiency Droop of InGaN Light-Emitting Diodes Based on Reduced Effective Volume of Active Region by Carrier Localization[J]. Applied Physics Express,2013,6(9):092101.
APA Hongjian Li, Panpan Li, Junjie Kang, Zhi Li, Yiyun Zhang, Meng Liang, Zhicong Li, Jing Li, Xiaoyan Yi and Guohong Wang.(2013).Analysis Model for Efficiency Droop of InGaN Light-Emitting Diodes Based on Reduced Effective Volume of Active Region by Carrier Localization.Applied Physics Express,6(9),092101.
MLA Hongjian Li, Panpan Li, Junjie Kang, Zhi Li, Yiyun Zhang, Meng Liang, Zhicong Li, Jing Li, Xiaoyan Yi and Guohong Wang."Analysis Model for Efficiency Droop of InGaN Light-Emitting Diodes Based on Reduced Effective Volume of Active Region by Carrier Localization".Applied Physics Express 6.9(2013):092101.
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