Suppression of thermal degradation of InGaN_GaN quantum wells in green laser diode structures during the epitaxial growth | |
Zengcheng LiJianping LiuMeixin FengKun ZhouShuming ZhangHui WangDeyao LiLiqun ZhangDegang ZhaoDesheng JiangHuaibing WangHui Yang | |
2013 | |
Source Publication | Applied Physics Letters
![]() |
Volume | 103Issue:15Pages:152109 |
Subject Area | 光电子学 |
Indexed By | SCI |
Language | 英语 |
Date Available | 2014-04-09 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/24764 |
Collection | 光电子研究发展中心 |
Recommended Citation GB/T 7714 | Zengcheng LiJianping LiuMeixin FengKun ZhouShuming ZhangHui WangDeyao LiLiqun ZhangDegang ZhaoDesheng JiangHuaibing WangHui Yang. Suppression of thermal degradation of InGaN_GaN quantum wells in green laser diode structures during the epitaxial growth[J]. Applied Physics Letters,2013,103(15):152109. |
APA | Zengcheng LiJianping LiuMeixin FengKun ZhouShuming ZhangHui WangDeyao LiLiqun ZhangDegang ZhaoDesheng JiangHuaibing WangHui Yang.(2013).Suppression of thermal degradation of InGaN_GaN quantum wells in green laser diode structures during the epitaxial growth.Applied Physics Letters,103(15),152109. |
MLA | Zengcheng LiJianping LiuMeixin FengKun ZhouShuming ZhangHui WangDeyao LiLiqun ZhangDegang ZhaoDesheng JiangHuaibing WangHui Yang."Suppression of thermal degradation of InGaN_GaN quantum wells in green laser diode structures during the epitaxial growth".Applied Physics Letters 103.15(2013):152109. |
Files in This Item: | ||||||
File Name/Size | DocType | Version | Access | License | ||
Suppression of therm(1124KB) | 限制开放 | License | Application Full Text |
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Edit Comment