| Suppression of thermal degradation of InGaN_GaN quantum wells in green laser diode structures during the epitaxial growth | |
| Zengcheng LiJianping LiuMeixin FengKun ZhouShuming ZhangHui WangDeyao LiLiqun ZhangDegang ZhaoDesheng JiangHuaibing WangHui Yang | |
| 2013 | |
| Source Publication | Applied Physics Letters
 |
| Volume | 103Issue:15Pages:152109 |
| Subject Area | 光电子学 |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2014-04-09 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/24764 |
| Collection | 光电子研究发展中心 |
| Recommended Citation GB/T 7714 | Zengcheng LiJianping LiuMeixin FengKun ZhouShuming ZhangHui WangDeyao LiLiqun ZhangDegang ZhaoDesheng JiangHuaibing WangHui Yang. Suppression of thermal degradation of InGaN_GaN quantum wells in green laser diode structures during the epitaxial growth[J]. Applied Physics Letters,2013,103(15):152109. |
| APA | Zengcheng LiJianping LiuMeixin FengKun ZhouShuming ZhangHui WangDeyao LiLiqun ZhangDegang ZhaoDesheng JiangHuaibing WangHui Yang.(2013).Suppression of thermal degradation of InGaN_GaN quantum wells in green laser diode structures during the epitaxial growth.Applied Physics Letters,103(15),152109. |
| MLA | Zengcheng LiJianping LiuMeixin FengKun ZhouShuming ZhangHui WangDeyao LiLiqun ZhangDegang ZhaoDesheng JiangHuaibing WangHui Yang."Suppression of thermal degradation of InGaN_GaN quantum wells in green laser diode structures during the epitaxial growth".Applied Physics Letters 103.15(2013):152109. |
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| Suppression of therm（1124KB） | 限制开放 | License | Application Full Text | |||
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