| Interface and Transport Properties of Metallization Contacts to Flat and Wet-Etching Roughed N-Polar n-Type GaN | |
| Liancheng Wang, Zhiqiang Liu, Enqing Guo, Hua Yang, Xiaoyan Yi, Guohong Wang | |
| 2013 | |
| Source Publication | ACS Applied Materials & Interfaces
 |
| Volume | 5Issue:12Pages:5797–5803 |
| Subject Area | 光电子学 |
| Indexed By | SCI |
| Date Available | 2014-04-09 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/24762 |
| Collection | 中科院半导体照明研发中心 |
| Recommended Citation GB/T 7714 | Liancheng Wang, Zhiqiang Liu, Enqing Guo, Hua Yang, Xiaoyan Yi, Guohong Wang. Interface and Transport Properties of Metallization Contacts to Flat and Wet-Etching Roughed N-Polar n-Type GaN[J]. ACS Applied Materials & Interfaces,2013,5(12):5797–5803. |
| APA | Liancheng Wang, Zhiqiang Liu, Enqing Guo, Hua Yang, Xiaoyan Yi, Guohong Wang.(2013).Interface and Transport Properties of Metallization Contacts to Flat and Wet-Etching Roughed N-Polar n-Type GaN.ACS Applied Materials & Interfaces,5(12),5797–5803. |
| MLA | Liancheng Wang, Zhiqiang Liu, Enqing Guo, Hua Yang, Xiaoyan Yi, Guohong Wang."Interface and Transport Properties of Metallization Contacts to Flat and Wet-Etching Roughed N-Polar n-Type GaN".ACS Applied Materials & Interfaces 5.12(2013):5797–5803. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| Interface and Transp（4612KB） | 限制开放 | License | Application Full Text | |||
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