Interface and Transport Properties of Metallization Contacts to Flat and Wet-Etching Roughed N-Polar n-Type GaN | |
Liancheng Wang, Zhiqiang Liu, Enqing Guo, Hua Yang, Xiaoyan Yi, Guohong Wang | |
2013 | |
Source Publication | ACS Applied Materials & Interfaces
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Volume | 5Issue:12Pages:5797–5803 |
Subject Area | 光电子学 |
Indexed By | SCI |
Date Available | 2014-04-09 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/24762 |
Collection | 中科院半导体照明研发中心 |
Recommended Citation GB/T 7714 | Liancheng Wang, Zhiqiang Liu, Enqing Guo, Hua Yang, Xiaoyan Yi, Guohong Wang. Interface and Transport Properties of Metallization Contacts to Flat and Wet-Etching Roughed N-Polar n-Type GaN[J]. ACS Applied Materials & Interfaces,2013,5(12):5797–5803. |
APA | Liancheng Wang, Zhiqiang Liu, Enqing Guo, Hua Yang, Xiaoyan Yi, Guohong Wang.(2013).Interface and Transport Properties of Metallization Contacts to Flat and Wet-Etching Roughed N-Polar n-Type GaN.ACS Applied Materials & Interfaces,5(12),5797–5803. |
MLA | Liancheng Wang, Zhiqiang Liu, Enqing Guo, Hua Yang, Xiaoyan Yi, Guohong Wang."Interface and Transport Properties of Metallization Contacts to Flat and Wet-Etching Roughed N-Polar n-Type GaN".ACS Applied Materials & Interfaces 5.12(2013):5797–5803. |
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