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Effects of thin heavily Mg-doped GaN capping layer on ohmic contact formation of p-type GaN
L L Wu, D G Zhao, D S Jiang, P Chen, L C Le, L Li, Z S Liu, S M Zhang, J J Zhu, H Wang, B S Zhang, H Yang
2013
Source PublicationSemiconductor Science and Technology
Volume28Issue:10Pages:105020
Subject Area光电子学
Indexed BySCI
Language英语
Date Available2014-04-09
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24761
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
L L Wu, D G Zhao, D S Jiang, P Chen, L C Le, L Li, Z S Liu, S M Zhang, J J Zhu, H Wang, B S Zhang, H Yang. Effects of thin heavily Mg-doped GaN capping layer on ohmic contact formation of p-type GaN[J]. Semiconductor Science and Technology,2013,28(10):105020.
APA L L Wu, D G Zhao, D S Jiang, P Chen, L C Le, L Li, Z S Liu, S M Zhang, J J Zhu, H Wang, B S Zhang, H Yang.(2013).Effects of thin heavily Mg-doped GaN capping layer on ohmic contact formation of p-type GaN.Semiconductor Science and Technology,28(10),105020.
MLA L L Wu, D G Zhao, D S Jiang, P Chen, L C Le, L Li, Z S Liu, S M Zhang, J J Zhu, H Wang, B S Zhang, H Yang."Effects of thin heavily Mg-doped GaN capping layer on ohmic contact formation of p-type GaN".Semiconductor Science and Technology 28.10(2013):105020.
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