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N-polar GaN etching and approaches to quasi-perfect micro-scale pyramid vertical light-emitting diodes array
Wang, Liancheng; Ma, Jun; Liu, Zhiqiang; Yi, Xiaoyan; Yuan, Guodong; Wang, Guohong
2013
Source PublicationJournal of Applied Physics
Volume114Issue:13Pages:133101
Subject Area光电子学
Indexed BySCI
Language英语
Date Available2014-04-09
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24760
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
Wang, Liancheng,Ma, Jun,Liu, Zhiqiang,et al. N-polar GaN etching and approaches to quasi-perfect micro-scale pyramid vertical light-emitting diodes array[J]. Journal of Applied Physics,2013,114(13):133101.
APA Wang, Liancheng,Ma, Jun,Liu, Zhiqiang,Yi, Xiaoyan,Yuan, Guodong,&Wang, Guohong.(2013).N-polar GaN etching and approaches to quasi-perfect micro-scale pyramid vertical light-emitting diodes array.Journal of Applied Physics,114(13),133101.
MLA Wang, Liancheng,et al."N-polar GaN etching and approaches to quasi-perfect micro-scale pyramid vertical light-emitting diodes array".Journal of Applied Physics 114.13(2013):133101.
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