N-polar GaN etching and approaches to quasi-perfect micro-scale pyramid vertical light-emitting diodes array | |
Wang, Liancheng; Ma, Jun; Liu, Zhiqiang; Yi, Xiaoyan; Yuan, Guodong; Wang, Guohong | |
2013 | |
Source Publication | Journal of Applied Physics
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Volume | 114Issue:13Pages:133101 |
Subject Area | 光电子学 |
Indexed By | SCI |
Language | 英语 |
Date Available | 2014-04-09 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/24759 |
Collection | 中科院半导体照明研发中心 |
Recommended Citation GB/T 7714 | Wang, Liancheng,Ma, Jun,Liu, Zhiqiang,et al. N-polar GaN etching and approaches to quasi-perfect micro-scale pyramid vertical light-emitting diodes array[J]. Journal of Applied Physics,2013,114(13):133101. |
APA | Wang, Liancheng,Ma, Jun,Liu, Zhiqiang,Yi, Xiaoyan,Yuan, Guodong,&Wang, Guohong.(2013).N-polar GaN etching and approaches to quasi-perfect micro-scale pyramid vertical light-emitting diodes array.Journal of Applied Physics,114(13),133101. |
MLA | Wang, Liancheng,et al."N-polar GaN etching and approaches to quasi-perfect micro-scale pyramid vertical light-emitting diodes array".Journal of Applied Physics 114.13(2013):133101. |
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