| N-polar GaN etching and approaches to quasi-perfect micro-scale pyramid vertical light-emitting diodes array | |
| Wang, Liancheng; Ma, Jun; Liu, Zhiqiang; Yi, Xiaoyan; Yuan, Guodong; Wang, Guohong | |
| 2013 | |
| Source Publication | Journal of Applied Physics
 |
| Volume | 114Issue:13Pages:133101 |
| Subject Area | 光电子学 |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2014-04-09 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/24759 |
| Collection | 中科院半导体照明研发中心 |
| Recommended Citation GB/T 7714 | Wang, Liancheng,Ma, Jun,Liu, Zhiqiang,et al. N-polar GaN etching and approaches to quasi-perfect micro-scale pyramid vertical light-emitting diodes array[J]. Journal of Applied Physics,2013,114(13):133101. |
| APA | Wang, Liancheng,Ma, Jun,Liu, Zhiqiang,Yi, Xiaoyan,Yuan, Guodong,&Wang, Guohong.(2013).N-polar GaN etching and approaches to quasi-perfect micro-scale pyramid vertical light-emitting diodes array.Journal of Applied Physics,114(13),133101. |
| MLA | Wang, Liancheng,et al."N-polar GaN etching and approaches to quasi-perfect micro-scale pyramid vertical light-emitting diodes array".Journal of Applied Physics 114.13(2013):133101. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| N polar GaN etching （2193KB） | 限制开放 | License | Application Full Text | |||
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