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The effects of InGaN layer thickness on the performance of InGaN_GaN p–i–n solar cells
Li Liang, Zhao De-Gang, Jiang De-Sheng, Liu Zong-Shun, Chen Ping, Wu Liang-Liang, Le Ling-Cong, Wang Hui, Yang Hui
2013
Source PublicationChin. Phys. B
Volume22Issue:6Pages:068802
Subject Area光电子学
Indexed BySCI
Language英语
Date Available2014-04-09
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24744
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
Li Liang, Zhao De-Gang, Jiang De-Sheng, Liu Zong-Shun, Chen Ping, Wu Liang-Liang, Le Ling-Cong, Wang Hui, Yang Hui. The effects of InGaN layer thickness on the performance of InGaN_GaN p–i–n solar cells[J]. Chin. Phys. B,2013,22(6):068802.
APA Li Liang, Zhao De-Gang, Jiang De-Sheng, Liu Zong-Shun, Chen Ping, Wu Liang-Liang, Le Ling-Cong, Wang Hui, Yang Hui.(2013).The effects of InGaN layer thickness on the performance of InGaN_GaN p–i–n solar cells.Chin. Phys. B,22(6),068802.
MLA Li Liang, Zhao De-Gang, Jiang De-Sheng, Liu Zong-Shun, Chen Ping, Wu Liang-Liang, Le Ling-Cong, Wang Hui, Yang Hui."The effects of InGaN layer thickness on the performance of InGaN_GaN p–i–n solar cells".Chin. Phys. B 22.6(2013):068802.
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