| Effect of V-defects on the performance deterioration of InGaN_GaN multiple-quantum-well light-emitting diodes with varying barrier layer thickness | |
| Le, L. C.; Zhao, D. G.; Jiang, D. S.; Li, L.; Wu, L. L.; Chen, P.; Liu, Z. S.; Yang, J.; Li, X. J.; He, X. G.; Zhu, J. J.; Wang, H.; Zhang, S. M.; Yang, H. | |
| 2013 | |
| Source Publication | Journal of Applied Physics
 |
| Volume | 114Issue:14Pages:143706 |
| Subject Area | 光电子学 |
| Date Available | 2014-04-09 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/24740 |
| Collection | 光电子研究发展中心 |
| Recommended Citation GB/T 7714 | Le, L. C.,Zhao, D. G.,Jiang, D. S.,et al. Effect of V-defects on the performance deterioration of InGaN_GaN multiple-quantum-well light-emitting diodes with varying barrier layer thickness[J]. Journal of Applied Physics,2013,114(14):143706. |
| APA | Le, L. C..,Zhao, D. G..,Jiang, D. S..,Li, L..,Wu, L. L..,...&Yang, H..(2013).Effect of V-defects on the performance deterioration of InGaN_GaN multiple-quantum-well light-emitting diodes with varying barrier layer thickness.Journal of Applied Physics,114(14),143706. |
| MLA | Le, L. C.,et al."Effect of V-defects on the performance deterioration of InGaN_GaN multiple-quantum-well light-emitting diodes with varying barrier layer thickness".Journal of Applied Physics 114.14(2013):143706. |
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| File Name/Size | DocType | Version | Access | License | ||
| Effect of V-defects （1740KB） | 限制开放 | License | Application Full Text | |||
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