| Performance Enhancement of GaN-Based Laser Diodes With Prestrained Growth | |
| Feng, Mei-Xin; Liu, Jian-Ping; Zhang, Shu-Ming; Jiang, De-Sheng; Li, Zeng-Cheng; Zhou, Kun; Li, De-Yao; Zhang, Li-Qun; Wang, Feng; Wang, Hui; Chen, Ping; Liu, Zong-Shun; Zhao, De-Gang; Sun, Qian; Yang, Hui | |
| 2013 | |
| Source Publication | IEEE Photonics Technology Letters
 |
| Volume | 25Issue:24Pages:2401-2404 |
| Subject Area | 光电子学 |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2014-04-09 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/24730 |
| Collection | 光电子研究发展中心 |
| Recommended Citation GB/T 7714 | Feng, Mei-Xin,Liu, Jian-Ping,Zhang, Shu-Ming,et al. Performance Enhancement of GaN-Based Laser Diodes With Prestrained Growth[J]. IEEE Photonics Technology Letters,2013,25(24):2401-2404. |
| APA | Feng, Mei-Xin.,Liu, Jian-Ping.,Zhang, Shu-Ming.,Jiang, De-Sheng.,Li, Zeng-Cheng.,...&Yang, Hui.(2013).Performance Enhancement of GaN-Based Laser Diodes With Prestrained Growth.IEEE Photonics Technology Letters,25(24),2401-2404. |
| MLA | Feng, Mei-Xin,et al."Performance Enhancement of GaN-Based Laser Diodes With Prestrained Growth".IEEE Photonics Technology Letters 25.24(2013):2401-2404. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| Performance Enhancem（896KB） | 限制开放 | License | Application Full Text | |||
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