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Performance Enhancement of GaN-Based Laser Diodes With Prestrained Growth
Feng, Mei-Xin; Liu, Jian-Ping; Zhang, Shu-Ming; Jiang, De-Sheng; Li, Zeng-Cheng; Zhou, Kun; Li, De-Yao; Zhang, Li-Qun; Wang, Feng; Wang, Hui; Chen, Ping; Liu, Zong-Shun; Zhao, De-Gang; Sun, Qian; Yang, Hui
2013
Source PublicationIEEE Photonics Technology Letters
Volume25Issue:24Pages:2401-2404
Subject Area光电子学
Indexed BySCI
Language英语
Date Available2014-04-09
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24730
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
Feng, Mei-Xin,Liu, Jian-Ping,Zhang, Shu-Ming,et al. Performance Enhancement of GaN-Based Laser Diodes With Prestrained Growth[J]. IEEE Photonics Technology Letters,2013,25(24):2401-2404.
APA Feng, Mei-Xin.,Liu, Jian-Ping.,Zhang, Shu-Ming.,Jiang, De-Sheng.,Li, Zeng-Cheng.,...&Yang, Hui.(2013).Performance Enhancement of GaN-Based Laser Diodes With Prestrained Growth.IEEE Photonics Technology Letters,25(24),2401-2404.
MLA Feng, Mei-Xin,et al."Performance Enhancement of GaN-Based Laser Diodes With Prestrained Growth".IEEE Photonics Technology Letters 25.24(2013):2401-2404.
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